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MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current Gain Bandwidth Product • Annular Const.
• High Collector−Emitter Sustaining Voltage
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current Gain Bandwidth Product
• Annular Construction for Low Leakages
• These Devices are Pb−Free and are RoHS Compliant
*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
100
Vdc
100
Vdc
7.0
Vdc
4.0
Adc
8.0
Adc
1.0
Adc
15
W
120
mW/_C
Total Power Di.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE243 |
CDIL |
NPN EPITAXIAL SILICON POWER TRANSISTOR |
|
| 2 | MJE243 |
Motorola |
4 AMPERE POWER TRANSISTORS |
|
| 3 | MJE243 |
ON |
POWER TRANSISTORS |
|
| 4 | MJE243 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | MJE243 |
Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | MJE243 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | MJE240 |
Central Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 8 | MJE240 |
Motorola |
(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 9 | MJE240 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | MJE241 |
Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 11 | MJE241 |
Motorola |
(MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 12 | MJE242 |
Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
|