MJE200G Complementary Silicon Power Plastic Transistors Datasheet

MJE200G Complementary Silicon Power Plastic Transistors

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and a.

Features

• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc 15 W 0.12 mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 1.5 W 0.012 m.

No.	Partie #	Fabricant	Description
1	MJE200	Motorola	5 AMPERE POWER TRANSISTORS
2	MJE200	Fairchild	NPN Epitaxial Silicon Transistor
3	MJE200	Inchange Semiconductor	Silicon NPN Power Transistor
4	MJE200	Central Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTORS
5	MJE200	BLUE ROCKET ELECTRONICS	Silicon NPN transistor
6	MJE200	ON Semiconductor	Complementary Silicon Power Plastic Transistors
7	MJE205	ETC	5 Ampere Power Transistor
8	MJE205K	ETC	5 Ampere Power Transistor
9	MJE210	ST Microelectronics	SILICON PNP TRANSISTOR
10	MJE210	Fairchild	PNP Epitaxial Silicon Transistor
11	MJE210	Motorola	5 AMPERE POWER TRANSISTORS
12	MJE210	Central Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTORS

MJE200G - ON Semiconductor

MJE200G Complementary Silicon Power Plastic Transistors

Features

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