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The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Marking MJD44H11 MJD45H11 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape and reel Order codes MJD44H11T4-A MJD45H11T4-A August 2009 Doc ID 16095 Rev 1 1/8 www.st.
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The devices are qualified for automotive application Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")
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TAB 2
Applications
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DPAK TO-252
Power amplifier Switching circuits Figure 1. Internal schematic diagram
Description
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.
Table 1.
Device summary
Marking MJD44H11 MJD45H11 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape an.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD44H11T4 |
STMicroelectronics |
Low voltage complementary power transistors |
|
| 2 | MJD44H11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | MJD44H11 |
Kexin |
Complementary Power Transistors |
|
| 4 | MJD44H11 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD44H11 |
ST Microelectronics |
Complementary power transistors |
|
| 6 | MJD44H11 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 7 | MJD44H11 |
ON Semiconductor |
Complementary Power Transistors |
|
| 8 | MJD44H11 |
nexperia |
8A NPN high power bipolar transistor |
|
| 9 | MJD44H11A |
nexperia |
8A NPN high power bipolar transistor |
|
| 10 | MJD44 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 11 | MJD44 |
Fairchild |
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
|
| 12 | MJD44 |
ST Microelectronics |
COMPLEMENTARY SILICON PNP TRANSISTORS |
|