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The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD112 MJD117T4 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK .
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
.
TAB 3
1
TO-252 (DPAK)
Figure 1. Internal schematic diagram
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Order codes
Marking
MJD112T4
MJD112
MJD117T4
MJD117
January 2010
Polarity NPN PNP
Doc ID 3540 Rev 3
Package DPAK DPAK
Packaging Tape and reel Tape and r.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor |
|
| 5 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
|
| 6 | MJD112 |
JCET |
NPN Transistor |
|
| 7 | MJD112 |
GME |
Epitaxial Planar NPN Transistor |
|
| 8 | MJD112 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 9 | MJD112 |
MCC |
NPN Transistor |
|
| 10 | MJD112 |
STMicroelectronics |
Complementary power Darlington transistor |
|
| 11 | MJD112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 12 | MJD112 |
Motorola |
SILICON POWER TRANSISTORS |
|