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SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERIST.
High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C K H F F 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER E B D M I J P L .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
|
| 3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | MJD112 |
Fairchild Semiconductor |
NPN Silicon Darlington Transistor |
|
| 5 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
|
| 6 | MJD112 |
JCET |
NPN Transistor |
|
| 7 | MJD112 |
GME |
Epitaxial Planar NPN Transistor |
|
| 8 | MJD112 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 9 | MJD112 |
MCC |
NPN Transistor |
|
| 10 | MJD112 |
STMicroelectronics |
Complementary power Darlington transistor |
|
| 11 | MJD112 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 12 | MJD112 |
Motorola |
SILICON POWER TRANSISTORS |
|