MIXA61H1200ED - IXYS

MIXA61H1200ED XPT IGBT

IGBT XPT Module H Bridge Preliminary data Part name (Marking on product) MIXA 61H1200ED MIXA 61H1200ED VCES = 1200 V IC25 = 85 A VCE(sat) = 1.8 V 13 D1 D5 1 T1 9 T5 2 10 16 14 D2 D6 3 T2 11 T6 4 12 17 E72873 Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme .

Features

• Easy paralleling due to the positive temperature coefficient of the on-state voltage
• Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
• Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
• SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode an.