MIP0210SP - Panasonic Semiconductor

MIP0210SP Silicon MOS IC

Intelligent Power Devices (IPDs) MIP0210SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 0.5±0.1 1 2 3 8 1.2±0.25 7 6 5 6.3±0.2 9.4.

Features

q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 0.5±0.1 1 2 3 8 1.2±0.25 7 6 5 6.3±0.2 9.4±0.3 s Applications q Switching power supply (to 7W) q AC adaptor q Battery charger 4 2.54±0.25 0.6
  –0.1 +0.25 3.8±0.25 4.0±0.3 7.62±0.25 s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Output current Control current Channel temperature Storage temperature Symbol VD .