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MIG200Q2CSB1X
MITSUBISHI SEMICONDUCTOR
(L) 4. VD (L) 5. FO (H) 6. GND (H) 2005-04-01 3/10 MIG200Q2CSB1X Maximum Ratings (Tj = 25°C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal/mounting) AC 1 minute M5 FO-GND (L) terminal FO sink current ⎯ ⎯ Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ⎯ VD-GND terminal IN-GND terminal Condition P-N power ter.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MIG200Q101H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 2 | MIG200J201H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 3 | MIG20J103 |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 4 | MIG20J103H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 5 | MIG20J503H |
Toshiba Semiconductor |
Intelligent Power Module |
|
| 6 | MIG20J805H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 7 | MIG20J806H |
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
| 8 | MIG20J901H |
Toshiba |
INTEGRATED GTR MODULE |
|
| 9 | MIG20J902H |
Toshiba |
High Power Switching Applications |
|
| 10 | MIG20J906E |
Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
|
| 11 | MIG20J906EA |
Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
|
| 12 | MIG20J906H |
Toshiba |
Integrated IGBT Module Silicon N-Channel IGBT |
|