MGV050-26 - MA-COM

MGV050-26 GaAs Abrupt Varactor Diodes

The MGV series of abrupt varactor diodes feature passivated mesa construction for low leakage and excellent post tuning drift. Optimum performance is obtained using die however packaged devices are available as well screened per MIL-PRF-19500 and MIL-PRF-38534. Rev. V1 Chip (C01A) Electrical Specifications: TA = +25°C, VB = 22 V min., IR = 100 nA max. Mod.

Features

 0 to 22 V Tuning Voltage
 Screening Available per: MIL-PRF-19500 and MIL-PRF-35834
 RoHS
* Compliant Description The MGV series of abrupt varactor diodes feature passivated mesa construction for low leakage and excellent post tuning drift. Optimum performance is obtained using die however packaged devices are available as well screened per MIL-PRF-19500 and MIL-PRF-38534. Rev. V1 Chip (C01A) Electrical Specifications: TA = +25°C, VB = 22 V min., IR = 100 nA max. Model MGV050-18 Total Capacitance (pF) VR = 4 V, 1 MHz Min. Nom. Max. 0.25 0.30 0.35 Min. 4.0 Tuning Ratio VR = 0 to 22.