MG120R080 - JILIN SINO

MG120R080 N-CHANNEL Enhancement Silicon Carbide MOSFET

N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG120R080 MAIN CHARACTERISTICS Package ID VCE Rdson-typ （@Vgs=18V） Qg-typ 28A 1200V 80MΩ 85nC ⚫ ⚫ ⚫ DC/DC ⚫ ⚫ ⚫ APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Pulsed Power applications ⚫ ⚫ ⚫ ⚫ ⚫ ⚫RoHS FEATURES ⚫.

Features

⚫High Blocking Voltage
⚫Low On-Resistance
⚫High Speed Switching with Low Capacitances
⚫Easy to Parallel and Simple to Drive
⚫Avalanche Ruggedness
⚫RoHS product TO-247 TO-247-4L ORDER MESSAGE Order codes - Halogen-Free-Tube MG120R080-GE-BR MG120R080-GH-BR ：202404A Marking MG120R080 MG120R080 Package TO-247 TO-247-4L 1/9 R ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage Drain Current -continuous Drain Current - pulse Power Dissipation Electro Static Discharge Operating and Storage Temperature Range Maximum Lead Temperatur.