Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and.
● RDS(ON)≦5.2mΩ@VGS=-10V
● RDS(ON)≦10.5mΩ@VGS=-4V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● LCD Display inverter
* The Ordering Information: ME8.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ME8117A |
Matsuki |
P-Channel MOSFET |
|
| 2 | ME8117 |
Matsuki |
P-Channel MOSFET |
|
| 3 | ME8117-G |
Matsuki |
P-Channel MOSFET |
|
| 4 | ME8110 |
ETC |
Power Management IC |
|
| 5 | ME8110 |
Microne |
Current Mode PWM Power Switch |
|
| 6 | ME8110B |
YUSHIN |
High performance current mode PWM controller |
|
| 7 | ME8115 |
Microne |
High-Performance Current Mode PWM Switching Power Controller |
|
| 8 | ME8100 |
Microne |
HIGH PERFORMANCE OFF-LINE CONTROLLER |
|
| 9 | ME8101 |
Microne |
High Performance Current Mode PWM switching power supply controller |
|
| 10 | ME8105 |
Microne |
PWM Controller of High-performance Current Mode |
|
| 11 | ME8107 |
Matsuki |
P-Channel Enhancement Mode MOSFET |
|
| 12 | ME8107 |
Microne |
Current Mode PWM Controller |
|