ME8107-G - Matsuki

ME8107-G P-Channel Enhancement Mode MOSFET

The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and ot.

Features

● RDS(ON)≦7.2mΩ@VGS=-10V
● RDS(ON)≦12mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● LCD Display inverter e Ordering Information: ME8107(Pb-free) ME8107-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation
* Operating Junction T.