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The ME7345-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and .
● RDS(ON)≦15mΩ@VGS=-10V
● RDS(ON)≦20mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
Ordering Information: ME7345-G (Green product-Halogen free )
Absolute Maximum Ratings (TC=25℃ Unless.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ME7356-G |
Matsuki |
N-Channel MOSFET |
|
| 2 | ME7362 |
Matsuki |
N-Channel MOSFET |
|
| 3 | ME7362-G |
Matsuki |
N-Channel MOSFET |
|
| 4 | ME7386 |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME7386-G |
Matsuki |
N-Channel MOSFET |
|
| 6 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) |
|
| 7 | ME700803 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) |
|
| 8 | ME701202 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |
|
| 9 | ME701203 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) |
|
| 10 | ME701602 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |
|
| 11 | ME701603 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) |
|
| 12 | ME7027A |
ETC |
(ME7027A / ME7044A) Voltage Detector |
|