ME4950-G - Matsuki

ME4950-G Dual N-Channel MOSFET

The ME4950 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management a.

Features

● RDS(ON)≦115mΩ@VGS=10V
● RDS(ON)≦137mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● LCD Display inverter e Ordering Information: ME4950 (P.