The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.
● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦21mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
PIN CONFIGURATION
(SOP-8) Top View
Ordering Information: ME4812B (Pb-free) ME4812B-G (Green prod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME4812 |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
2 | ME4812-G |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
3 | ME4812B-G |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
4 | ME4839W |
Micro Electronics |
WHITE SIDE BACKLIGHT | |
5 | ME4856 |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
6 | ME4856-G |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
7 | ME4894 |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
8 | ME4894-G |
Matsuki |
N-Channel 30-V(D-S) MOSFET | |
9 | ME4-H2 |
Winsen |
Hydrogen Gas Sensor | |
10 | ME4-NH3 |
Winsen |
Ammonia Gas Sensor | |
11 | ME4-SO2 |
Winsen |
Electrochemical Sulfur Dioxide Sensor | |
12 | ME401C |
Microne |
DC-DC Converter |