The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and othe.
● RDS(ON)≦6mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● DC/DC Converter
* TheOrdering Information: ME3205F (Pb-free)
ME4
ME3205F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME3205F-G |
Matsuki |
N-Channel MOSFET | |
2 | ME3205H-G |
Matsuki |
N-Channel MOSFET | |
3 | ME3205P |
Matsuki |
N-Channel MOSFET | |
4 | ME3205P-G |
Matsuki |
N-Channel MOSFET | |
5 | ME3205T |
Matsuki |
N-Channel MOSFET | |
6 | ME3205T-G |
Matsuki |
N-Channel MOSFET | |
7 | ME3206 |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
8 | ME3206AAA |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
9 | ME3206ABB |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
10 | ME3206KAA |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
11 | ME3206KBB |
Microne |
Low ESR Cap Compatable Positive Voltage Regulators | |
12 | ME3215 |
Coilcraft |
SMT Power Inductors |