ME15N25F-G - Matsuki

ME15N25F-G N-Channel 250V (D-S) MOSFET

The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION ME15N25F/ME15N25F-G FEATURES ● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional.

Features

● RDS(ON)≦220mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter (TO-220F) Top View
* The Ordering Information: ME15N25F (Pb-free) ME15N25F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Symbol VDS VGS ID Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD Junctio.