MDWC0151ERH - MagnaChip

MDWC0151ERH Common-Drain Dual N-Channel Trench MOSFET

The MDWC0151ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 24V - Source-Source ON Resistance; RSS(ON) max. 2.8mΩ @ VGS = 4.5V RSS(ON) max. 3.1mΩ @ VGS = 3.8V RSS(ON) max..

Features

- VSS = 24V - Source-Source ON Resistance; RSS(ON) max. 2.8mΩ @ VGS = 4.5V RSS(ON) max. 3.1mΩ @ VGS = 3.8V RSS(ON) max. 3.6mΩ @ VGS = 3.1V RSS(ON) max. 4.6mΩ @ VGS = 2.5V Applications - Portable Battery Protection Bottom View 3.2mm
*2.1mm WLCSP 1, 2, 4, 5. Source1 (FET1) 6, 7, 9, 10. Source2 (FET2) 3. Gate1 (FET1) 8. Gate2 (FET2) Absolute Maximum Ratings (TA = 25oC unless otherwise noted) Characteristics Symbol Source-Source Voltage Gate-Source Voltage Source Current DC
*1 Pulse Total Power Dissipation DC
*1 Channel Temperature Junction and Storage Temperature Range VSSS VGSS IS I.