MDQ23N50D - MagnaChip

MDQ23N50D N-Channel Trench MOSFET

. These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 23A  RDS(ON) ≤ 0.245Ω Applications  Power Supply  .

Features

 VDS = 500V
 ID = 23A
 RDS(ON) ≤ 0.245Ω Applications
 Power Supply
 HID
 Lighting @ VGS = 10V @ VGS = 10V D TO-247 S DG GG G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* ID limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Thermal Charact.