MDIS4N60 - MagnaChip

MDIS4N60 N-Channel MOSFET

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications Power.

Features

VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D I-PAK VSL (TO-251 VSL) Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC G Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg S Rating.