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MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW C.
NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W °C °C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. Typical Applications q q q q www.DataSheet4U.com TJ Tstg VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL £ 1 mA Insulating material: Al2O3 Mounting torque (module) (t.
MDI75-12A3 - IXYS
MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 1200.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MDI100-12A3 |
ETC |
IGBT Modules |
|
| 2 | MDI100-12A3 |
IXYS |
IGBT Module |
|
| 3 | MDI145-12A3 |
IXYS Corporation |
IGBT Modules - Short Circuit SOA Capability Square RBSOA |
|
| 4 | MDI150-12A4 |
IXYS Corporation |
IGBT Modules Short Circuit SOA Capability Square RBSOA |
|
| 5 | MDI1752 |
MagnaChip |
N-Channel Trench MOSFET |
|
| 6 | MDI1N60S |
MagnaChip |
N-Channel Trench MOSFET |
|
| 7 | MDI200-12A4 |
IXYS |
IGBT Module |
|
| 8 | MDI2N60 |
MagnaChip |
N-Channel Trench MOSFET |
|
| 9 | MDI300-12A4 |
IXYS |
IGBT Modules |
|
| 10 | MDI400-12E4 |
IXYS Corporation |
IGBT Module |
|
| 11 | MDI40A0BA2XXIX |
Carlo Gavazzi |
(MDI40A Series) Panel Meters and Controllers |
|
| 12 | MDI40AxxxxXXIX |
Carlo Gavazzi |
(MDI40A Series) Panel Meters and Controllers |
|