MDI4N60 - MagnaChip

MDI4N60 N-Channel MOSFET

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 3.5A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications.

Features

 VDS = 600V  ID = 3.5A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D GDS I-PAK (TO-251A) G Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) MOSFET dv/dt Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv.