MDF3N50 - MagnaChip

MDF3N50 N-Channel MOSFET

The MDF3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF3N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 2.8A  RDS(ON) ≤ 2.5Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  High Current, High Speed.

Features

 VDS = 500V  ID = 2.8A  RDS(ON) ≤ 2.5Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate .