MDA0531E - MagnaChip

MDA0531E N-Channel Trench MOSFET

The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V. Features VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < .

Features

VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.5V Applications Unidirectional or Bi-directional Load Switch Lithium-Ion Battery Packs Portable Battery Protection Module Absolute Maximun Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulse Drain Current Power Dissipation for Single Operation(1) Junction and Storage Temperature Range TA=25oC TA=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(S.