MD2103DFP - STMicroelectronics

MD2103DFP High voltage NPN power transistor

The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. RBE=65Ω (typ) Table 1. Device summary Marking MD2103DFP Package TO-220FP Packing Tube Order code MD2103DFP .

Features

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■ State-of-the-art technology:
  – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 2 3 Applications
■ Horizontal deflection output for TV Figure 1. Internal schematic diagram Description The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency brig.