MCR265-4 - ON Semiconductor

MCR265-4 Silicon Controlled Rectifiers

MCR265−4 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parame.

Features

age Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 70°C) Operating Junction Temperature Range IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ 55 Amps 35 Amps 550 Amps 20 Watts 0.5 Watt 2.0 Amps −40 to +125 °C Storage Temperature Range Tstg −40 to °C +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that t.