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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR12/D Advance Information *Motorola preferred devices MCR12 SERIES* Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlle.
ec Watts Watts A °C °C Value Unit Volts On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds RθJC RθJA TL.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MCR10 |
Rohm |
(MCR Series) Thick Film Chip Resistors |
|
| 2 | MCR100 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 3 | MCR100 |
Micro Electronics |
0.8A SCR |
|
| 4 | MCR100 |
Unisonic Technologies |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
|
| 5 | MCR100 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |
|
| 6 | MCR100 |
Rohm |
(MCR Series) Thick Film Chip Resistors |
|
| 7 | MCR100 |
BLUE ROCKET ELECTRONICS |
Thyristor |
|
| 8 | MCR100-3 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 9 | MCR100-3 |
Semtech |
SCR |
|
| 10 | MCR100-3 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |
|
| 11 | MCR100-3 |
Taiwan Semiconductor |
Small Signal Diode |
|
| 12 | MCR100-3 |
CDIL |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS |
|