MBW100T120PHF - MagnaChip

MBW100T120PHF 1200V Field stop High Ruggedness version IGBT

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), C high switching performance and excellent quality. Features Applications G  1200V Trench + Field stop technology  High power & High Ruggedness drives  Low switching losses  Motor driver  Positive temperature coefficient  High .

Features

Applications G
 1200V Trench + Field stop technology
 High power & High Ruggedness drives
 Low switching losses
 Motor driver
 Positive temperature coefficient
 High Input Impedance E Chip Type MBW100T120PHF VCE 1200V IC(Note 1, 2) 100A Die Size 9.588 X 10.490 mm2 Package Sawn on foil Mechanical Parameters Parameter Die size Scribe lane Emitter pad size Gate pad size Thickness Wafer size Net die Pad metal Backside metal Passivation frontside Die bond Wire bond Reject die identification Storage environment Condition/ Material LxW Width LxW AlSiCu Al/Ti/Ni/Ag Value Unit .