MBRT60030 - GeneSiC

MBRT60030 Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter .

Features

• High Surge Capability
• Types from 20 V to 40 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150.