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MBRS360P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection .
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Ep.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MBRS360 |
ON Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
| 2 | MBRS360BT3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 3 | MBRS360G |
American First Semiconductor |
3.0A Surface Mount Schottky Barrier Rectifiers |
|
| 4 | MBRS360T3 |
ON Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
| 5 | MBRS360T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 6 | MBRS360TR |
International Rectifier |
SCHOTTKY RECTIFIER |
|
| 7 | MBRS30H45CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 8 | MBRS3100G |
American First Semiconductor |
3.0A Surface Mount Schottky Barrier Rectifiers |
|
| 9 | MBRS3100P |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 10 | MBRS3100T3 |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 11 | MBRS3100T3D |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 12 | MBRS3100T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|