Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wh.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage − 200 V
• 175°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRS3200G |
American First Semiconductor |
3.0A Surface Mount Schottky Barrier Rectifiers | |
2 | MBRS320 |
Fairchild Semiconductor |
SCHOTTKY POWER RECTIFIER | |
3 | MBRS320 |
ON Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
4 | MBRS320 |
International Rectifier |
SCHOTTKY RECTIFIER | |
5 | MBRS3201 |
EIC |
SCHOTTKY FAST SOFT - RECOVERY RECOVERY POWER RECTIFIER | |
6 | MBRS3201P |
ON Semiconductor |
Schottky Fast Soft-Recovery Power Rectifier | |
7 | MBRS3201T3 |
ON Semiconductor |
Schottky Power Rectifier | |
8 | MBRS3201T3G |
ON Semiconductor |
Schottky Power Rectifier | |
9 | MBRS320G |
American First Semiconductor |
3.0A Surface Mount Schottky Barrier Rectifiers | |
10 | MBRS320P |
ON Semiconductor |
Surface Mount Schottky Power Rectifier | |
11 | MBRS320T3 |
ON Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
12 | MBRS320T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |