MBRS1100T3G - ON Semiconductor

MBRS1100T3G Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ide.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: Features
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 Volts
• 175°C Operating Junction Temperature
• Guardring for Stress Protection .