MBRF745 - Motorola

MBRF745 SWITCHMODE Schottky Power Rectifirer

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF745/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low
  –voltage, high
  –frequency switching power supplies, free wheeling diodes and polarity protection diodes.
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• Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8″ Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369(1) MBRF745 Motoro.