MBRB1090-M3 - Vishay

MBRB1090-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF TJ max. Diode variation 10 A 90 V, 100 V 150 A 0.65 V 150 °C Single die FEATURES • Trench MOS Scho.

Features

• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compl.