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MBR830MFS, NRVB830MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Wettable Flacks Option Avail.
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MBR830 |
Diodes Incorporated |
8.0A SCHOTTKY BARRIER RECTIFIER |
|
| 2 | MBR830 |
LGE |
Schottky Barrier Rectifiers |
|
| 3 | MBR830 |
HY ELECTRONIC |
(MBR830 - MBR8100) SCHOTTKY BARRIER RECTIFIERS |
|
| 4 | MBR830NG |
American First Semiconductor |
8.0A Leaded Type Schottky Barrier Rectifiers |
|
| 5 | MBR835 |
Diodes Incorporated |
8.0A SCHOTTKY BARRIER RECTIFIER |
|
| 6 | MBR835 |
LGE |
Schottky Barrier Rectifiers |
|
| 7 | MBR835 |
ON Semiconductor |
(MBR835 - MBR845) Axial Lead Rectifiers |
|
| 8 | MBR80100 |
DACO SEMICONDUCTOR |
SCHOTTKY DIODE MODULE |
|
| 9 | MBR80100 |
MCC |
80 Amp Schottky Barrier Rectifier |
|
| 10 | MBR80100 |
TRANSYS |
(MBR8020 - MBR80100R) SCHOTTKY DIODES |
|
| 11 | MBR80100 |
Naina Semiconductor |
(MBR8045 - MBR80100R) Schottky Power Diode |
|
| 12 | MBR80100 |
America Semiconductor |
Silicon Power Schottky Diode |
|