MBR7030WTG Switch Mode Power Rectifier The Switch Mode power rectifier, a state−of−the−art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 30 V Blocking Voltage • Low Forward Voltage Drop • Guardring for S.
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
• 30 V Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability
• 175°C Operating Junction Temperature
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
*
Mechanical Characteristics
• Case: Epoxy, Molded. Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBR7030WT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
2 | MBR7030WT |
ON Semiconductor |
Power Rectifier | |
3 | MBR7100 |
JGD |
Schottky Barrier Rectifiers | |
4 | MBR7100 |
MDD |
SCHOTTKY BARRIER RECTIFIER | |
5 | MBR7100 |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
6 | MBR7100 |
Taiwan Semiconductor |
Schottky Rectifier | |
7 | MBR7150 |
JGD |
Schottky Barrier Rectifiers | |
8 | MBR7150 |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
9 | MBR7150 |
Taiwan Semiconductor |
Schottky Rectifier | |
10 | MBR720 |
MDD |
SCHOTTKY BARRIER RECTIFIER | |
11 | MBR720 |
Micro Commercial Components |
7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts | |
12 | MBR730 |
MDD |
SCHOTTKY BARRIER RECTIFIER |