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MBR40H100WT - ON Semiconductor

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MBR40H100WT Power Rectifier

www.DataSheet4U.com MBR40H100WT SWITCHMODE™ Power Rectifier 100 V, 40 A Features and Benefits • • • • • • • Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device http://onsemi.com SCHOTTKY BARRIE.

Features








• Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES 100 VOLTS 1 2, 4 3 Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation Mechanical Characteristics: MARKING DIAGRAM





• Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Ter.

The same part from a different manufacturer

Datasheet MBR40H100WT - Inchange Semiconductor MBR40H100WT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR40H100WT FEATURES ·Low Forward Voltage ·Low Power Loss,High Effic.

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