MBR40030CTR - GeneSiC

MBR40030CTR (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode

MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocki.

Features

• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C Electrical char.