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MBR3530 - Naina Semiconductor

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MBR3530 (MBR3520 - MBR3540R) Schottky Power Diode

Naina Semiconductor Ltd. Schottky Power Diode, 35A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR3520 thru MBR3540R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R.

Features






• Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR3520 thru MBR3540R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Units Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 20 14 20 35 .

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Datasheet MBR3530 - Digitron Semiconductors MBR3530

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Datasheet MBR3530 - TRANSYS MBR3530

Transys Electronics LIMITED MBR3520(R) THRU MBR35100(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types.

Datasheet MBR3530 - GeneSiC MBR3530

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1.

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Datasheet MBR3530 - Micro Commercial Components MBR3530

MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %  .

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