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MBR30030CTR - GeneSiC

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MBR30030CTR Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(.

Features


• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -.

The same part from a different manufacturer

Datasheet MBR30030CTR - Naina Semiconductor MBR30030CTR

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U.

Datasheet MBR30030CTR - America Semiconductor MBR30030CTR

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

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