MBR300150CT - GeneSiC

MBR300150CT Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) R.

Features

• High Surge Capability
• Types from 150 V to 200 V VRRM
• Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified .