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MBR2030CTL - ON Semiconductor

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MBR2030CTL Dual Schottky Power Rectifier

MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) • High Junction Temperature • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Low Power Loss/High Efficiency • High Surge Capacity • 1.

Features


• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• High Junction Temperature
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• This Device is Pb−Free and is RoHS Compliant
* Applications
• Power Supply − Output Rectification
• Power Management − ORING
• Instrumentation Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams .

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