MBR20300CT - INCHANGE

MBR20300CT Schottky Barrier Rectifier

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20300CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to.

Features

·Metal silicon junction, majority carrier conduction
·Low leakage current, low power loss, high efficiency
·Dual rectifier construction, positive center tap
·Guardring for overvoltage protection
·High surge current capability
·Low stored charge majority carrier conduction
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching power supply
·Converters
·Free-Wheeling diodes
·Reverse battery protection
·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltag.