MBR20100CT-M3 - Vishay

MBR20100CT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com MBR2090CT-M3, MBR20100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 10 A 90 V, 100 V 150 A 0.65 V 150 °C TO-220AB Diode variation Common cathode FEATURES • Trench MOS Schottky tech.

Features

• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and comm.