MBM29PL65LM - Fujitsu Media Devices

MBM29PL65LM FLASH MEMORY 64M (4M x 16) BIT

MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 1.

Features

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• MirrorFlash MemoryTM
*1 0.23 µm Process Technology 4 M × 16 bit configuration Single 3.0 V read, program and erase Standard 48-pin TSOP (1) (Package suffix : TN) Minimum 100,000 program/erase cycles High performance Page mode (4 words) Sector erase architecture (Sectors can be grouped in any given combination.) 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase. HiddenROM Region Write Protect by WP pin Embedded EraseTM
*2 Algorithms Embedded ProgramTM
*2 Algorithms Data Polling and Toggle Bit feature for detection of program or er.