The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus con.
a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV652UE is erased when shipped from the factory. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode. The devices electrically erase al.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29LV652UE-12 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
2 | MBM29LV652UE-90 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
3 | MBM29LV650UE |
Fujitsu Media Devices |
64M (4M x 16) BIT FLASH MEMORY | |
4 | MBM29LV650UE-12 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
5 | MBM29LV650UE-90 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
6 | MBM29LV651UE |
Fujitsu Media Devices |
64M (4M x 16) BIT | |
7 | MBM29LV651UE-12 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
8 | MBM29LV651UE-90 |
Fujitsu |
64M (4M x 16) BIT FLASH MEMORY | |
9 | MBM29LV001BC |
Fujitsu Media Devices |
1M (128K x 8) BIT FLASH MEMORY | |
10 | MBM29LV001BC-55 |
Fujitsu |
1M (128K x 8) BIT FLASH MEMORY | |
11 | MBM29LV001BC-70 |
Fujitsu |
1M (128K x 8) BIT FLASH MEMORY | |
12 | MBM29LV001TC |
Fujitsu Media Devices |
1M (128K x 8) BIT |