FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pin.
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) 46-pin SON (Package suffix: PN) 48-pin CSOP (Package suffix: PCV) 48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
80 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode One 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29LV160B-12 |
Fujitsu |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
2 | MBM29LV160B-90 |
Fujitsu |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
3 | MBM29LV160B |
Fujitsu Media Devices |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
4 | MBM29LV160BE |
Fujitsu Media Devices |
16M (2M X 8/1M X 16) BIT | |
5 | MBM29LV160BM |
Fujitsu Media Devices |
(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM | |
6 | MBM29LV160T |
Fujitsu Media Devices |
16M (2M x 8/1M x 16) BIT | |
7 | MBM29LV160T-12 |
Fujitsu |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
8 | MBM29LV160T-80 |
Fujitsu |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
9 | MBM29LV160T-90 |
Fujitsu |
16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
10 | MBM29LV160TE |
Fujitsu Media Devices |
16M (2M X 8/1M X 16) BIT | |
11 | MBM29LV160TM |
Fujitsu Media Devices |
(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM | |
12 | MBM29LV001BC |
Fujitsu Media Devices |
1M (128K x 8) BIT FLASH MEMORY |