FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 1M (128K × 8) BIT DS05-20861-3E MBM29LV001TC-55/-70/MBM29LV001BC-55/-70 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 32-pin TS.
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 32-pin TSOP(I) (Package suffix: PFTN
– Normal Bend Type, PFTR
– Reversed Bend Type) 32-pin PLCC (Package suffix: PD)
• Minimum 100,000 program/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 8K byte, two 4K bytes, and seven 16K bytes Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Archi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29LV001TC-70 |
Fujitsu |
1M (128K x 8) BIT FLASH MEMORY | |
2 | MBM29LV001TC |
Fujitsu Media Devices |
1M (128K x 8) BIT | |
3 | MBM29LV001BC |
Fujitsu Media Devices |
1M (128K x 8) BIT FLASH MEMORY | |
4 | MBM29LV001BC-55 |
Fujitsu |
1M (128K x 8) BIT FLASH MEMORY | |
5 | MBM29LV001BC-70 |
Fujitsu |
1M (128K x 8) BIT FLASH MEMORY | |
6 | MBM29LV002BC |
Fujitsu Media Devices |
2M (256K x 8) BIT FLASH MEMORY | |
7 | MBM29LV002BC-12 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
8 | MBM29LV002BC-70 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
9 | MBM29LV002BC-90 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
10 | MBM29LV002TC |
Fujitsu Media Devices |
2M (256K x 8) BIT | |
11 | MBM29LV002TC-12 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
12 | MBM29LV002TC-70 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY |