MBD770DWT1G - ON Semiconductor

MBD770DWT1G Schottky Barrier Diodes

98ASB42985B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88 2.00x1.25x0.90, 0.65P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States an.

Features

• Extremely Fast Switching Speed
• Low Forward Voltage
• AEC Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Forward Current IF 100 mA Non−Repetitive Peak Forward Surge IFSM 1 A Current (60 Hz Half Sine) Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C (Note 1) VR 70 V PF 380 mW 3 mW/°C Operating Junction and Storag.