The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 16-bit format. The MB81F641642C features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coex.
a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642C SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM. The MB81F641642C is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MB81F641642C |
Fujitsu |
4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM | |
2 | MB81F641642D |
Fujitsu Microelectronics |
4 x 1M x 16-Bit SDRAM | |
3 | MB81F643242C |
Fujitsu Media Devices |
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM | |
4 | MB81F161622B |
Fujitsu |
2 x 512K x 16-Bit SDRAM | |
5 | MB81F161622C |
Fujitsu |
2 x 512K x 16-Bit SDRAM | |
6 | MB81 |
Micro Commercial Components |
Single Phase Bridge Rectifier | |
7 | MB810 |
Micro Commercial Components |
Single Phase Bridge Rectifier | |
8 | MB811643242A |
Fujitsu |
2 x 512K x 32-Bit SDRAM | |
9 | MB8116E |
Fujitsu |
MOS DRAM | |
10 | MB8116H |
Fujitsu |
MOS DRAM | |
11 | MB8116NC |
Fujitsu |
MOS DRAM | |
12 | MB8117405B |
Fujitsu |
4M X 4-Nit Hyper Page Mode DRAM |